question_answer

Pure silicon at 300 K has equal electron n, and hole \[\left( {{\text{n}}_{h}} \right)\] concentration of \[\text{1}.\text{5}\times \text{l}{{0}^{\text{16}}}\text{ }{{\text{m}}^{-3}}.\] Doping by indium increases \[{{n}_{h}}\text{to 4}.\text{5}\times \text{1}{{0}^{\text{22}}}\text{ }{{\text{m}}^{-3}}.\]The rig in the doped silicon is

A) \[\text{9}\times \text{l}{{0}^{\text{5}}}\]                            

B)  \[\text{5}\times \text{l}{{0}^{\text{9}}}\]

C) \[\text{2}.\text{25}\times \text{1}{{0}^{11}}\]                                  

D)  \[\text{3}\times \text{l}{{0}^{\text{19}}}\]