Electric conduction in a semiconductor takes place due to
A)
Electrons only
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B)
Holes only
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C)
Both electrons and holes
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D)
Neither electrons nor holes
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Let \[{{n}_{p}}\] and \[{{n}_{e}}\] be the number of holes and conduction electrons in an extrinsic semiconductor. Then
A)
\[{{n}_{p}}>{{n}_{e}}.\]
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B)
\[{{n}_{p}}={{n}_{e}}.\]
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C)
\[{{n}_{p}}<{{n}_{e}}.\]
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D)
\[{{n}_{p}}\ne {{n}_{e}}.\]
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If the two ends of a p-n junction are joined by a wire
A)
There will not be a steady current in the circuit
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B)
There will be a steady current from the n-side to the p-side
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C)
There will be a steady current from the p-side to the n-side
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D)
There may or may not be a current depending upon the resistance of the connecting wire
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In a transistor
A)
The emitter has the least concentration of impurity
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B)
The collector has the least concentration of impurity
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C)
The base has the least concentration of impurity
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D)
All the three regions have equal concentrations of impurity
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What is the resistivity of a pure semiconductor at absolute zero?
A)
Zero
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B)
Infinity
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C)
Same as that of conductors at room temperature
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D)
Same as that of insulators at room temperature
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Temperature coefficient of resistance of semiconductor is
A)
Zero
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B)
Constant
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C)
Positive
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D)
Negative
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In a half wave rectifier, the r. m. s. value of the A.C. component of the wave is
A)
Equal to d. c. value
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B)
More than d. c. value
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C)
Less than d. c. value
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D)
Zero
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Zener diode is used for
A)
Amplification
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B)
Rectification
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C)
Stabilisation
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D)
All of the above
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In reverse biasing
A)
Large amount of current flows
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B)
Potential barrier across junction increases
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C)
Depletion layer resistance decreases
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D)
No current flows
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The main difference between voltage and power amplifiers is that
A)
Power amplifier handles current
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B)
Power amplifier handles large voltage
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C)
Power amplifier handles large power
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D)
None of the above
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In a transistor:
A)
Both emitter and collector have same length
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B)
Length of emitter is greater than that of collector
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C)
Length of collector is greater than that of emitter
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D)
Any one of emitter and collector can have greater length
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A d. c. battery of V volt is connected to a series combination of a resistor R and an ideal diode D as shown in the figure below. The potential difference across R will be
A)
2V when diode is forward biased
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B)
Zero when diode is forward biased
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C)
V when diode is reverse biased
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D)
V when diode is forward biased
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The intrinsic semiconductor becomes an insulator at
A)
\[0{}^\circ C\]
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B)
0 K
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C)
300 K
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D)
\[-100{}^\circ C\]
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In an unbiased p-n junction, holes diffuse from the p-region to n- region because
A)
Free electrons in the n-region attract them
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B)
They move across the junction by the potential difference
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C)
hole concentration in p-region is more as compared to n-region
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D)
All the above
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In a semiconductor, the concentration of electrons is \[8\times {{10}^{14}}/c{{m}^{3}}\] and that of the holes is \[5\times {{10}^{12}}c{{m}^{3}}.\] The semiconductor is
A)
p-type
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B)
n-type
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C)
Intrinsic
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D)
pnp type
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In extrinsic semiconductors
A)
The conduction band and valence band overlap
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B)
The gap between conduction band and valence band is more than 16 eV
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C)
The gap between conduction bands mid valence band is near about 1 eV
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D)
The gap between conduction band and valence band will be 100 eV and more
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Function of rectifier is
A)
To convert ac into dc
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B)
to convert dc into ac
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C)
Both [a] and [b]
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D)
None of these
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An oscillator is nothing but an amplifier with
A)
Positive feedback
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B)
negative feedback
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C)
Large gain
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D)
no feedback
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To obtain P-type Si semiconductor, we need to dope pure Si with
A)
Aluminium
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B)
Phosphorous
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C)
Oxygen
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D)
Germanium.
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In a fall wave rectifiers, input ac current has a frequency 'v'. The output frequency of current is
A)
v/2
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B)
v
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C)
2v
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D)
none of these
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