Answer:
(i) When As is implanted
in Si-crystal, n-type wafer is created. The no. of majority carrier electrons
due to doping of A s, is
No. of minority carriers
(holes ) in n-type wafer is
When B is implanted in Si
?crystal, p-type wafer is created with no of holes,
Minority carriers
(electrons ) created in p-type wafer is
(ii) When p-n junction is reverse biased, the minority
carrier holes of n-region wafer would
contribute more to the reverse saturation current than minority carrier
electrons
of p-region wafer.
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