| (i) type of semiconductor material |
| (ii) amount of doping temperature |
A) (i) and (ii) only
B) (ii) only
C) (ii) and (iii) only
D) (i), (ii) and (iii)
Correct Answer: D
Solution :
Barrier potential should depend on all the three options given. Barrier potential depends on the material used to make p-n junction diode (whether it is Si or Ge). It should also depends on amount of doping due to which the number of majority carriers will change. It should also depend on temperature due to number of minority carriers will change.
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