Answer:
Donor energy levels. In case of a n-type semiconductor, when a pentavalent donor atom replaces a Ge or Si atom, four of its five valence electrons form covalent bonds with the neighbouring Ge or Si atoms. The fifth electron revolving around the nucleus of the donor atom requires very small energy (0.01 eV in Ge and 0.05 eV in Si) to leave the donor atom (because of high dielectric constant of Ge or Si). It occupies a discrete energy level just below the bottom of the conduction band. Such an energy level is called a donor energy level. Acceptor energy level. In case of a p-type semi- conductor, the trivalent acceptor atoms create holes which introduce energy levels just above the valence band (0. 01 eV above B \[{{E}_{\upsilon }}\] in Ge and 0.05 eV above \[{{E}_{\upsilon }}\] in Si). Such energy levels are called acceptor energy levels.
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