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question_answer1) Mobility of electrons in a semiconductor is defined as the ratio of their drift velocity to the applied electric field. If, for an n - type semiconductor, the density of electrons is \[{{10}^{9}}{{m}^{-3}}\] and their mobility is \[1.6{{m}^{2}}/(V.s)\] then the resistivity \[\left( in\,\,\Omega \,\,m \right)\] of the semiconductor (since it is an n - type semiconductor contribution of holes is ignored) is
question_answer2) Ge and Si diodes start conducting at 0.3 V and 0.7 V respectively. In the following figure if Ge diode connection are reversed, the value of \[{{V}_{0}}\](in volt) changes by: (assume that the Ge diode has large breakdown voltage)
question_answer3) Copper, a monovalent, has molar mass 63.54 g/mol and density \[8.96\text{ }g/c{{m}^{3}}\]. What is the number density n \[(in\text{ }{{m}^{-3}})\] of conduction electron in copper?
question_answer4) An LED is constructed from a p-n junction based on a certain Ga - As - P semiconducting material whose energy gap is 1.9eV. What is the wavelength (in nm) of the emitted light?
question_answer5) For the circuit shown below, the current (in mA) through the Zener diode is:
question_answer6) An npn transistor operates as a common emitter amplifier with a power gain of 60 dB. The input circuit resistance is 100W and the output load resistance is 10 kW. The common emitter current gain b is :
question_answer7) In half - wave rectification, what is the output frequency (in Hz) if the input frequency is 50 Hz?
question_answer8) A common emitter amplifier circuit, built using an npn transistor, is shown in the figure. Its dc current gain is \[250,{{R}_{C}}=1K\Omega \] and \[{{V}_{CC}}=10V.\] What is the minimum base current \[(in\mu A)\] for \[{{V}_{CE}}\] to reach saturation?
question_answer9) In a photodiode, the conductivity increases when the material is exposed to light. It is found that the conductivity changes only if the wavelength is less than 620 nm. What is the band gap (in eV)?
question_answer10) When the base current in a transistor is changed from \[30\mu A\] to \[80\mu A\], the collector current is changed from 1.0 mA to 3.5 mA. Find the current gain \[\beta \].
question_answer11) In the given circuit the current (in mA) through Zener Diode is
question_answer12) In an intrinsic semiconductor the energy gap \[{{E}_{g}}\] is 1.2eV. Its hole mobility is much smaller than electron mobility and independent of temperature. What is the ratio between conductivity at 600K and that at 300K? Assume that the temperature dependence of intrinsic carrier concentration \[{{n}_{i}}\] is given by \[{{n}_{i}}={{n}_{0}}\exp \left( -\frac{{{E}_{g}}}{2{{k}_{B}}T} \right)\] where \[{{n}_{0}}\] is a constant. \[{{K}_{B}}=8.62\times {{10}^{-5}}eV{{k}^{-1}}\]
question_answer13) The reverse breakdown voltage of a Zener diode is 5.6 V in the given circuit. The current \[{{I}_{Z}}\] (in mA) through the Zener is:
question_answer14) The transfer characteristic curve of a transistor, having input and output resistance \[100\Omega \] and \[100k\Omega \] respectively, is shown in the figure. The Voltage gain is
question_answer15) The circuit shown below contains two ideal diodes, each with a forward resistance of \[50\Omega \]. If the battery voltage is 6V, the current through the \[100\Omega \] resistance (in Ampere) is:
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